vishay siliconix si1016x document number: 71168 s-80427-rev. d, 03-mar-08 www.vishay.com 1 complementary n- and p-channel 20-v (d-s) mosfet features ? halogen-free opti on available ? trenchfet ? power mosfets ? 2000 v esd protection ? very small footprint ? high-side switching ? low on-resistance: n-channel, 0.7 p-channel, 1.2 ? low threshold: 0.8 v (typ.) ? fast switching speed: 14 ns ? 1.8 v operation benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? low battery voltage operation applications ? replace digital transistor, level-shifter ? battery oper ated systems ? power supply converter circuits ? load/power switching cell phones, pagers product summary v ds (v) r ds(on) ( )i d (ma) n-channel 20 0.70 at v gs = 4.5 v 600 0.85 at v gs = 2.5 v 500 1.25 at v gs = 1.8 v 350 p-channel - 20 1.2 at v gs = - 4.5 v - 400 1.6 at v gs = - 2.5 v - 300 2.7 at v gs = - 1.8 v - 150 t op v iew 3 1 d 2 g 2 s 1 5 2 4 6 d 1 s 2 g 1 sot -563 sc-89 marking code: a ordering information: SI1016X-T1-E3 (lead (pb)-free) si1016x-t1-ge3 (lead (pb)-free and halogen-free) notes: a. surface mounted on fr4 board. b. pulse width limited by maximum junction temperature. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit 5 s steady state 5 s steady state drain-source voltage v ds 20 - 20 v gate-source voltage v gs 6 continuous drain current (t j = 150 c) a t a = 25 c i d 515 485 - 390 - 370 ma t a = 85 c 370 350 - 280 - 265 pulsed drain current b i dm 650 - 650 continuous source current (diode conduction) a i s 450 380 - 450 - 380 maximum power dissipation a t a = 25 c p d 280 250 280 250 mw t a = 85 c 145 130 145 130 operating junction and storage temperature range t j , t stg - 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v rohs compliant
www.vishay.com 2 document number: 71168 s-80427-rev. d, 03-mar-08 vishay siliconix si1016x notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs, i d = 250 a n-ch 0.45 1 v v ds = v gs , i d = - 250 a p-ch - 0.45 - 1 gate body leakage i gss v ds = 0 v, v gs = 4.5 v n-ch 0.5 1.0 a p-ch 1.0 2.0 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v n-ch 0.3 100 na v ds = - 16 v, v gs = 0 v p-ch - 0.3 - 100 v ds = 16 v, v gs = 0 v, t j = 85 c n-ch 5 a v ds = - 16 v, v gs = 0 v, t j = 85 c p-ch - 5 on state drain current a i d(on) v ds = 5 v, v gs = 4.5 v n-ch 700 ma v ds = - 5 v, v gs = - 4.5 v p-ch - 700 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 600 ma n-ch 0.41 0.70 v gs = - 4.5 v, i d = - 350 ma p-ch 0.80 1.2 v gs = 2.5 v, i d = 500 ma n-ch 0.53 0.85 v gs = - 2.5 v, i d = - 300 ma p-ch 1.20 1.6 v gs = 1.8 v, i d = 350 ma n-ch 0.70 1.25 v gs = - 1.8 v, i d = - 150 ma p-ch 1.80 2.7 forward transconductance a g fs v ds = 10 v, i d = 400 ma n-ch 1.0 s v ds = - 10 v, i d = - 250 ma p-ch 0.4 diode forward voltage a v sd i s = 150 ma, v gs = 0 v n-ch 0.8 1.2 v i s = - 150 ma, v gs = 0 v p-ch - 0.8 - 1.2 dynamic b total gate charge q g n-channel v ds = 10 v, v gs = 4.5 v, i d = 250 ma p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 250 ma n-ch 750 pc p-ch 1500 gate-source charge q gs n-ch 75 p-ch 150 gate-drain charge q gd n-ch 225 p-ch 450 tu r n - o n t i m e t on n-channel v dd = 10 v, r l = 47 i d ? 200 ma, v gen = 4.5 v, r g = 10 p-channel v dd = - 10 v, r l = 47 i d ? - 200 ma, v gen = - 4.5 v, r g = 10 n-ch 5 ns p-ch 5 turn-off time t off n-ch p-ch 25 35
document number: 71168 s-80427-rev. d, 03-mar-08 www.vishay.com 3 vishay siliconix si1016x n-channel typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 1.8 v v ds - drain-to-source voltage (v) - drain current (a) i d 1 v 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 - on-resistance ( ) r ds(on) i d - drain current (ma) v gs = 1.8 v v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 v ds = 10 v i d = 250 ma - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 t c = - 55 c 125 c 25 c v gs - gate-to-source voltage (v) i d - drain current (ma) 0 20 40 60 80 100 0 4 8 12 16 20 v ds - drain-to-source voltage (v) c rss c os s c is s c - capacitance (pf) v gs = 0 v f = 1 mhz 0.60 0.80 1.00 1.20 1.40 1 . 60 - 50 - 25 0 2 5 5 0 7 5 100 125 t j - junction temperature (c) (normalized) - on-resistance r ds(on) v gs = 4.5 v i d = 350 ma v gs = 1.8 v i d = 150 ma
www.vishay.com 4 document number: 71168 s-80427-rev. d, 03-mar-08 vishay siliconix si1016x n-channel typical characteristics t a = 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage variance vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 v sd - source-to-drain voltage (v) - source current (ma) i s t j = 125 c t j = 25 c t j = 50 c 10 100 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma variance (v) v gs(th) t j - t emperature (c) on-resistance vs. gate-to-source voltage i gss vs. temperature 0 1 2 3 4 5 0 1 2 3 4 5 6 i d = 350 ma - on-resistance ( ) r ds(on) v gs - gate-to-source v oltage (v) i d = 200 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - t emperature (c) i gss - ( a) v gs = 4.5 v bv gss vs. temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 t j - t emperature (c) bv gss - gate-to-source breakdown voltage (v)
document number: 71168 s-80427-rev. d, 03-mar-08 www.vishay.com 5 vishay siliconix si1016x p-channel typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0.0 0.2 0.4 0.6 0.8 1 . 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 3 v 2 v v ds - drain-to-source voltage (v) - drain current (a) i d 1.8 v 2.5 v - on-resistance ( ) r ds(on) 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 i d - drain current (ma) v gs = 1.8 v v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds = 10 v i d = 250 ma - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j = - 55 c 125 c 25 c v gs - gate-to-source voltage (v) - drain current (ma) i d 0 20 40 60 80 100 120 0 4 8 12 16 20 v ds - drain-to-source voltage (v) c rss c os s c is s c - capacitance (pf) v gs = 0 v f = 1 mhz 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 v gs = 4.5 v i d = 350 ma t j - junction temperature (c) (normalized) r ds(on) v gs = 1.8 v i d = 150 ma - on-resistance ( )
www.vishay.com 6 document number: 71168 s-80427-rev. d, 03-mar-08 vishay siliconix si1016x p-channel typical characteristics t a = 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage variance vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 v sd - source-to-drain voltage (v) t j = 125 c t j = 25 c t j = - 55 c 10 100 i s - source current (ma) - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma variance (v) v gs(th) t j - t emperature (c) on-resistance vs. gate-to-source voltage i gss vs. temperature 0 1 2 3 4 5 0123456 i d = 350 ma - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) i d = 200 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - t emperature (c) i gss - (a) v gs = 4.5 v bv gss vs. temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 t j - t emperature (c) bv gss - gate-to-source breakdown voltage (v)
document number: 71168 s-80427-rev. d, 03-mar-08 www.vishay.com 7 vishay siliconix si1016x n- or p-channel typi cal characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71168 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 1 0 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance 1. duty cycle, d = 2. per unit base = r th ja = 500 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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